Winsemi WFSA5510
N- Channel and P-Channel Silicon MOSFETs
FEATURES
● Low On resistance.● Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4.5V/-4.5V supply voltage contained in a single package.
● High-density mounting.
● Zener-Protected
● RoHS compliant. SOP-8
APPLICATIONS
● Ultrahigh Speed Switching,● Motor Driver
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
at Ta=250C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Conditions Drain-Source Voltage Gate-Source Voltage Continuous Drain Current PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board Ratings N-Ch 100 +20 2 8 1.3 P-Ch -100 +20 -2 -8 Unit V V A A W W Total Dissipation Channel Temperature Storage Temperature PT Tch Tstg (1000mm2×0.8mm) Maximum Junction Temperature Storage Temperature Range 1.7 150 -55~+150 0 0 C C Rev.A Feb.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Datasheet pdf - WF...