WFU1N60 Datasheet | Winsemi

Datasheet pdf - http://..net/ .DataSheet.co.kr 1N60 WFU WFU1 Silicon N-Channel MOSFET Features - - - - - 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and...