WFU1N60 - Silicon N-Channel MOSFET

Winsemi

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Key Features

1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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WFU1N60 silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFU1N60
Manufacturer	Winsemi
File Size	579.44 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFU1N60 Datasheet

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WFU1N60C	Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 1N60 WFU WFU1 Silicon N-Channel MOSFET Features � � � � � 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and UPS.