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WFU4N65S - Power MOSFET

Datasheet Summary

Description

650V Super-Junction Power MOSFET

Features

  • Ultra low Rdson.
  • Ultra low gate charge (typ. Qg =13nC).
  • 100% UIS tested.
  • RoHS compliant General.

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Datasheet preview – WFU4N65S

Datasheet Details

Part number WFU4N65S
Manufacturer Winsemi
File Size 147.90 KB
Description Power MOSFET
Datasheet download datasheet WFU4N65S Datasheet
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Full PDF Text Transcription

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WFU4N65S Product Description 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
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