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WFU6N70 - Power MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

This devices is specially well suited for high efficiency switch mode power supply.

Features

  • 6A,700V, RDS(on)(Max 1.5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 51nC).
  • High Current Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFU6N70
Manufacturer Winsemi
File Size 373.86 KB
Description Power MOSFET
Datasheet download datasheet WFU6N70 Datasheet

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Full PDF Text Transcription

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WFU6N70 Silicon N-Channel MOSFET Features ■ 6A,700V, RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.
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