WSD30140DN56 Datasheet | Winsok

Description The WSD30140DN56 is the highest performance trench N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD30140DN56 meet the Ro HS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDSON 1.7mΩ ID 85A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Power Tool Application DFN5X6-8L Pin Configuration (4) G1 D1 (5,6,7,8) S1 (1,2,3) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1,7 Continuous Drain Current, VGS @ 10V1,7 Pulsed Drain Current2 Total Power St Dorisasgiepa Tteiomnp4erature Range Operating Junction Temperature Range Rating 30 ±20 85 65 300 50 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 55 1.5 Unit ℃/W ℃/W .winsok.tw Page 1 Rev 3.0: Mar. 2024 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold...