WSD30L20DN
WSD30L20DN is P-Ch MOSFET manufactured by Winsok.
Description
The WSD30L20DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application
Features
1,High density cell design for ultra low Rdson 2,Fully characterized avalanche voltage and current 3,Good stability and uniformity with high EAS 4,Excellent package for good heat dissipation
Product Summery
RDS(ON)
-30
18.8mΩ
-20A
Application
Lithium battery protection
Wireless impact
Mobile phone fast charging DFN3X3-8-EP Pin Configuration
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol VDS VGS
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
TC=25℃ TC=100℃
IDM EAS IAS
Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4
TC=25℃ TA=25℃
TSTG TJ RθJA
Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1
Rating -30 ±20 -20 -13 -80 16 -17 16.6 1.67
-55 to 150 -55 to 150
Units V V A A A m J A W W ℃ ℃
℃/W
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Rev1.Apr.2020
Electrical Characteristics (TC=25℃unless otherwise noted)
P-Ch...