WSD30L90DN56 Datasheet | Winsok

Description The WSD30L90DN56 is the highest performance trench P-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The WSD30L90DN56 meet the Ro HS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features - Advanced high cell density Trench technology - Super Low Gate Charge - Excellent Cd V/dt effect decline - 100% EAS Guaranteed - Green Device Available P-Channel MOSFET Product Summery BVDSS -30V RDS(ON) 5.2mΩ ID -90A Applications - High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA - Networking DC-DC Power System - Load Switch DFN5X6-8L Pin Configuration D1 (5,6,7,8) (4) G1 S1 (1,2,3) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25°C ID@TC=100°C ID@TA=25°C ID@TA=70°C IDM EAS IAS PD@TC=25°C PD@TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V 1 Continuous Drain Current, VGS @ -10V 1 Continuous Drain Current, VGS @ -10V 1 Continuous Drain Current, VGS @ -10V 1 Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 Avalanche Current Power Dissipation 4 Power Dissipation 4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance, Junction-to-Ambient 1 Thermal Resistance, Junction-to-Ambient 1 ( t ≤10s) Thermal Resistance, Junction-to-Case 1 .winsok.tw Page 1 Rating 10s Steady State -30 ±25 -90 -57...