Datasheet4U Logo Datasheet4U.com

WSD3046DN33 - Dual N-Channel MOSFET

Datasheet Summary

Description

The WSD3046DN33 is the highest performance trench Dual N- Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • 100% EAS Guaranteed.
  • Green Device Available WSD3046DN33 Dual N-Channel MOSFET Product Summery BVDSS 30V RDS(ON) 9mΩ ID 32A.

📥 Download Datasheet

Datasheet preview – WSD3046DN33

Datasheet Details

Part number WSD3046DN33
Manufacturer Winsok
File Size 775.72 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WSD3046DN33 Datasheet
Additional preview pages of the WSD3046DN33 datasheet.

📁 Similar Datasheet

  • WSD1030CT - D-PAK Surface Mount Schottky Barrier Rectifiers (Weitron Technology)
  • WSD1035CT - D-PAK Surface Mount Schottky Barrier Rectifiers (Weitron Technology)
  • WSD1040CT - D-PAK Surface Mount Schottky Barrier Rectifiers (Weitron Technology)
  • WSD1045CT - D-PAK Surface Mount Schottky Barrier Rectifiers (Weitron Technology)
  • WSD109H - Surface Mount Schottky Barrier Diodes (Weitron Technology)
  • WSD20L70DN - P-Channel 20V MOSFET (VBsemi)
  • WSD450F - Surface Mount Schottky Barrier Diodes (Weitron Technology)
  • WSD451F - Surface Mount Schottky Barrier Diodes (Weitron Technology)
  • WSD490 - Surface Mount Schottky Barrier Diode (Weitron Technology)
  • WSD491 - Surface Mount Schottky Barrier Diode (Weitron Technology)
Other Datasheets by Winsok

Full PDF Text Transcription

Click to expand full text
General Description The WSD3046DN33 is the highest performance trench Dual N- Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The WSD3046DN33 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Published: |