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Wisdom Semiconductor
WFF730
N-Channel MOSFET
Features
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RDS(on) (Max 0.95 Ω )@VGS=10V
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2. Drain
Gate Charge (Typical 25nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.DataSheet4U.com ■ Maximum Junction Temperature Range (150°C)
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General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.