Datasheet Summary
Wisdom Semiconductor
N-Channel MOSFET
Features
- -
RDS(on) (Max 0.95 Ω )@VGS=10V
Symbol
◀
{
2. Drain
Gate Charge (Typical 25nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested ..
- Maximum Junction Temperature Range (150°C)
- 1. Gate {
▲
- -
{
3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power...