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Wisdom Semiconductor
WFF740
N-Channel MOSFET
Features
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RDS(on) (Max 0.55 Ω )@VGS=10V
Symbol
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2. Drain
Gate Charge (Typical 38nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.DataSheet4U.com ■ Maximum Junction Temperature Range (150°C)
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1. Gate {
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3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
WFF740 Datasheet
