WFF840
Overview
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
- RDS(on) (Max 0.85 Ω )@VGS=10V Symbol ◀ {
- Drain Gate Charge (Typical 38nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C) *
- Gate { ▲ *
- Source
