WFF840B Datasheet PDF

Winsemi WFF840B

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Part No.	WFF840B
Datasheet	WFF840B Download
Manufacturer	Winsemi
Description	Silicon N-Channel MOSFET
Buy	Stock & Price

FEATURES

9A,500V, RDS(on)(Max0.75Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)

GENERAL DESCRIPTION

This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

ABSOLUTE MAXIMUM RATINGS

Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 500 9* 5.4* 36* ±30 360 13.5 4.5 135 1.07 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ *Drain current limited by maximum junction temperature Thermal Characte...