Datasheet Summary
PROVISIONAL
Wisdom Semiconductor
Features
- RDS(on) (Max 0.22 Ω )@VGS=10V
- Gate Charge (Typical 120nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.
N-Channel MOSFET
Symbol 1. Gate{
TO-247
{ 2. Drain
- ◀▲
- -
{ 3. Source
G...