C3M0040120J1
Key Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS pliant Benefits TAB Drain 1 2 34 5 6 7 G KS S S S S S
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency Applications Gate (Pin
