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C3M0040120J1 - Silicon Carbide Power MOSFET

Key Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits TAB Drain 1 2 34 5 6 7 G KS S S S S S.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • Reduce coolin.

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C3M0040120J1 Silicon Carbide Power MOSFET C3MTM MOSFET Technology N -Chan nel Enchancement Mode Features Package • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits TAB Drain 1 2 34 5 6 7 G KS S S S S S • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications Gate (Pin 1) Driver Source (Pin 2) Drain (TAB) Power Source (Pin 3,4,5,6,7) • Datacenter and Telecom Power Supplies • EV Battery Chargers • High voltage DC/DC con