C3M0040120J1 Overview
C3M0040120J1 Silicon Carbide Power MOSFET C3MTM MOSFET Technology N -Chan nel Enchancement Mode.
C3M0040120J1 Key Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency