C3M0040120J2 Key Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- Larger drain tab for better thermal performance
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency