C3M0040120K
Key Features
- Drain (Pin 1, TAB)
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant Gate (Pin
- 1 234 D SSG Driver Source (Pin
- Power Source (Pin
