C3M0040120K Overview
C3M0040120K 1200V 40mohm Silicon Carbide Power MOSFET N-Channel Enhancement Mode Tab Drain.
C3M0040120K Key Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
