C3M0900170J Description
C3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode.
C3M0900170J Key Features
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Qualified to operate under high humidity and high temperature
- Halogen free, RoHS pliant
- Smooth switching waveforms
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Increases system switching frequency
- Increases system reliability