C3M0900170M Description
C3M0900170M 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode.
C3M0900170M Key Features
- Fully isolated package for simplified assembly
- High-speed switching with low capacitances
- High blocking voltage with low RDS(on) 12V..18V / 0V VGS patible with most flyback controllers Ultra-low drain-gate capa
- Halogen free, RoHS pliant
- Smooth switching waveforms
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Increase system switching frequency
- Increase system reliability