C6D08065E Overview
C6D08065E 650 V, 8 A Silicon Carbide Schottky Diode.
C6D08065E Key Features
- New 6th generation technology
- Low forward voltage drop (VF)
- Zero reverse recovery current
- Zero forward recovery voltage
- Low leakage current (Ir)
- Temperature-independent switching behavior
- Positive temperature coefficient on VF