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C6D08065G - 8A Silicon Carbide Schottky Diode

General Description

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

Key Features

  • Low forward voltage (VF) drop with positive temperature coefficient.
  • Zero reverse recovery current/forward recovery voltage.
  • Temperature-independent switching behavior.
  • Low leakage current (IR) Maximum Ratings (TC = 25 °C Unless Otherwise Specified) Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VDC Value 650 650 30 Unit V Continuous Forward Current IF 15 8 Repetitive Peak Forward Surge Current 31 IFRM 17 A 56 IFSM 48.

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Datasheet Details

Part number C6D08065G
Manufacturer Wolfspeed
File Size 513.54 KB
Description 8A Silicon Carbide Schottky Diode
Datasheet download datasheet C6D08065G Datasheet

Full PDF Text Transcription for C6D08065G (Reference)

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C6D08065G 6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power el...

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advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. TO-263-2 Package Types: TO-263-2 PN: C6D08065G Wolfspeed, Inc.