CAB525F12XM3 - 1200V Silicon Carbide Half-Bridge Module

Wolfspeed

Key Features

High Power Density Footprint.
High Junction Temperature (175 °C) Operation.
Low-Inductance (6.7 nH) Design.
Implements Wolfspeed’s Third Generation SiC MOSFET Technology.
Silicon Nitride Insulator and Copper Baseplate.
Advanced Direct Cooling Baseplate C VDS 1200 V 4 IDS 3 525 A2 RMS 1 V+ V+ G1 K1 Mid NTC1 G2 K2 -t° NTC2 V- Typical.

CAB525F12XM3 1200v silicon carbide half-bridge module by Wolfspeed - Datasheet Preview

Datasheet Details

Part number	CAB525F12XM3
Manufacturer	Wolfspeed
File Size	2.81 MB
Description	1200V Silicon Carbide Half-Bridge Module
Datasheet	CAB525F12XM3 Datasheet

Other Datasheets by Wolfspeed

Part Number	Description
CAB500M17HM3	Half-Bridge Module
CAB530M12BM3	All-Silicon Carbide Half-Bridge Module
CAB530M12BM3T	All-Silicon Carbide Half-Bridge Module
CAB5R0A23GM4	Half-Bridge Module
CAB5R0A23GM4T	Half-Bridge Module
CAB003M09DM3	Half-Bridge Module
CAB004M12GM4	Half-Bridge Module
CAB004M12GM4T	Half-Bridge Module
CAB006A12GM3	Silicon Carbide Half-Bridge Module
CAB006A12GM3T	Silicon Carbide Half-Bridge Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CAB525F12XM3 5 1200 V, 2.6 mΩ, Silicon Carbide, Half-Bridge Module D Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low-Inductance (6.7 nH) Design • Implements Wolfspeed’s Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate • Advanced Direct Cooling Baseplate C VDS 1200 V 4 IDS 3 525 A2 RMS 1 V+ V+ G1 K1 Mid NTC1 G2 K2 -t° NTC2 V- Typical Applications • Motor and Motion Control • Vehicle Fast Chargers • Uninterruptable Power Supplies • Smart-Grid / Grid-Tied Distributed Generation • Traction Drives • E-mobility System Benefits 3 8,9 • Terminal layout allows for direct bus bar connec- tioBn without bends or low-iductance design.