CAB525F12XM3 Description
CAB525F12XM3 5 1200 V, 2.6 mΩ, Silicon Carbide, Half-Bridge Module D Technical.
CAB525F12XM3 Key Features
- High Power Density Footprint
- High Junction Temperature (175 °C) Operation
- Low-Inductance (6.7 nH) Design
- Implements Wolfspeed’s Third Generation SiC MOSFET
- Silicon Nitride Insulator and Copper Baseplate
- Advanced Direct Cooling Baseplate