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CCB016M12GM3, CCB016M12GM3T
1200 V, 16 mΩ, Silicon Carbide, Six-Pack Module
Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material
5 D
VDS
R4 DS(on)
3
1200 V 16 mΩ
2
1 D
DC+ (4x)
DC+ (2x)
C
C
G1
G3
G5
S1
S3
S5
U
V
W
NTC1
G2
G4
G6
S2
S4
S6
-t° NTC2
B
B
DC- 1
DC- 2
DC- 3
Typical Applications • DC-DC Converters • EV Chargers • High-Efficiency Converters / Inverters • Renewable Energy • Smart-Grid / Grid-Tied Distributed Generation
A
5
4
3
2
System Benefits
• Enables Compact, Lightweight Systems • Increased System Efficiency, due to Low Switching
& Conduction Losses of SiC
• Reduced Thermal Requirements and Sy