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CGH35060F2 - GaN HEMT

General Description

Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 - 3.5 GHz S-band pulsed amplifier applications.

Key Features

  • 3.1 - 3.5 GHz Operation.
  • 60 W Peak Power Capability.
  • 12 dB Small Signal Gain.
  • 60% Drain Efficiency Large Signal Models Available for ADS and MWO Rev. 4.4, 2022-10-28 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed  and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice.

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Full PDF Text Transcription (Reference)

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CGH35060F2/P2 60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 - 3.5 GHz S-band pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Package Types: 440193 & 440206 PNs: CGH35060F2 & CGH35060P2 Typical Performance Over 3.1-3.5 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Small Signal Gain POUT @ PIN = 36.5 dBm Gain @ PIN = 36.5 dBm Drain Efficiency @ PIN = 36.5 dBm Input Return Loss 3.1 GHz 12.0 47.0 10.4 55.0 -7.3 3.3 GHz 13.2 47.6 11.06 62.0 -17.0 3.5 GHz 11.5 46.7 10.1 62.0 -4.