Datasheet4U Logo Datasheet4U.com

CGH35060P2 - GaN HEMT

Download the CGH35060P2 datasheet PDF. This datasheet also covers the CGH35060F2 variant, as both devices belong to the same gan hemt family and are provided as variant models within a single manufacturer datasheet.

General Description

Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 - 3.5 GHz S-band pulsed amplifier applications.

Key Features

  • 3.1 - 3.5 GHz Operation.
  • 60 W Peak Power Capability.
  • 12 dB Small Signal Gain.
  • 60% Drain Efficiency Large Signal Models Available for ADS and MWO Rev. 4.4, 2022-10-28 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed  and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CGH35060F2-Wolfspeed.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CGH35060P1 GaN HEMT Cree
CGH35060F1 GaN HEMT Cree
CGH35015 GaN HEMT Cree
CGH35015F GaN HEMT Cree
CGH35030F GaN HEMT Cree

Other Datasheets by Wolfspeed

Part Number Description
CGH35060P1 GaN HEMT
CGH35060F1 GaN HEMT
CGH35060F2 GaN HEMT
CGH35015 GaN HEMT
CGH35030F GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CGH35060F2/P2 60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 - 3.5 GHz S-band pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Package Types: 440193 & 440206 PNs: CGH35060F2 & CGH35060P2 Typical Performance Over 3.1-3.5 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Small Signal Gain POUT @ PIN = 36.5 dBm Gain @ PIN = 36.5 dBm Drain Efficiency @ PIN = 36.5 dBm Input Return Loss 3.1 GHz 12.0 47.0 10.4 55.0 -7.3 3.3 GHz 13.2 47.6 11.06 62.0 -17.0 3.5 GHz 11.5 46.7 10.1 62.0 -4.