Datasheet Details
| Part number | CGH35060P1 |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 1.43 MB |
| Description | GaN HEMT |
| Datasheet | CGH35060P1 CGH35060F1 Datasheet (PDF) |
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Overview: CGH35060F1/P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | CGH35060P1 |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 1.43 MB |
| Description | GaN HEMT |
| Datasheet | CGH35060P1 CGH35060F1 Datasheet (PDF) |
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Wolfspeed’s CGH35060F F1/P1 is a gallium nitride (GaN) high electron mobility transistor(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear amplifier applications.
The transistor is supplied in a ceramic/metal flange and pill package.
Wolfspeed GaN-on-Silicon Carbide instead HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD).
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
CGH35060P1 | GaN HEMT | Cree |
| Part Number | Description |
|---|---|
| CGH35060P2 | GaN HEMT |
| CGH35060F1 | GaN HEMT |
| CGH35060F2 | GaN HEMT |
| CGH35015 | GaN HEMT |
| CGH35030F | GaN HEMT |
| CGH35240F | GaN HEMT |
| CGH31240F | GaN HEMT |
| CGH09120F | GaN HEMT |
| CGH21120F | GaN HEMT |
| CGH21240F | GaN HEMT |