Full PDF Text Transcription for CMPA801B025D (Reference)
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CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Description Cree’s CMP801B025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based mono...
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lium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. Typical Performance Over 8.0-11.0 GHz (TC = 25˚C) Parameter 8.0 GHz 9.
CMPA801B025D Datasheet
