CMPA801B025 Overview
CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density...
CMPA801B025 Key Features
- 11.0 GHz Operation
- 37 W POUT typical
- 16 dB Power Gain
- 36 % Typical PAE
- 50 Ohm internally matched
- <0.1 dB Power droop
