CMPA801B025 Datasheet | Cree

25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form- PN: CMPaPcAk8a0g1eBT0y2p5eF:/4C4M02P1A38/014B40022156P factor pill package (CMPA801B025P) for optimal electrical...