CMPA801B025 Datasheet
CMPA801B025 Datasheet (Wolfspeed)
Wolfspeed
Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium .
* 8.5 - 11.0 GHz Operation
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*
37 W POUT typical 16 dB Power Gain
* 36% Typical PAE
* 50 Ohm Internally Matched
* <0.1 dB Power Droop
Applications
* Marine Radar
* Communications
* Satellite Communication Uplink
Rev 4.1 - April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CMP.
CMPA801B025 Datasheet (Cree)
Cree
CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC.
* 8.5 - 11.0 GHz Operation
* 37 W POUT typical
* 16 dB Power Gain
* 36 % Typical PAE
* 50 Ohm internally matched
* <0.1 dB Power droop
Applications
* Marine Radar
* Communications
* Satellite Communication Uplink
Subject to change without notice.
1
Rev 4.0
* May 2017
Absolute Ma.