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CMPA801B025 - Power Amplifier

General Description

Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Key Features

  • 8.5 - 11.0 GHz Operation.
  • 37 W POUT typical 16 dB Power Gain.
  • 36% Typical PAE.
  • 50 Ohm Internally Matched.

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Full PDF Text Transcription for CMPA801B025 (Reference)

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CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monol...

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ium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance. PNs: CMPA801B025F and CMPA801B025P Package Types: 440213 an

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Brand Logo Part Number Description Manufacturer
CREE Logo CMPA801B025 Power Amplifier CREE

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