CMPA801B025 Overview
Key Specifications
Mount Type: Flanges
Max Frequency: 11 GHz
Description
Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
Key Features
- 8.5 - 11.0 GHz Operation
- 37 W POUT typical 16 dB Power Gain
- 36% Typical PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop
