Datasheet4U Logo Datasheet4U.com

CPM3-1200-0160A - SiC Gen 3 MOSFET

General Description

This is Wolfspeed’s 3rd generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design.

Key Features

  • Enhanced 3rd Generation SiC MOSFET.
  • High blocking voltage with low on-resistance.
  • Easy to parallel and simple to drive.
  • Resistant to latch-up G - Gate S - Source D - Drain.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CPM3-1200-0160A Wolfspeed SiC Gen 3 MOSFET Description This is Wolfspeed’s 3rd generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for applications in renewable energy, high voltage DC-DC converter, power supplies and UPS.