E3M0900170D - 1700V N-Channel Enhancement Mode Power MOSFET

Features

High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
12V15V/ 0V VGS compatible with most flyback controllers Ultra-low drain-gate capacitance.
Qualified to operate under high humidity and high tempera- ture environmental conditions.
Halogen free, RoHS compliant.
Automotive qualified (AEC-Q101) and PPAP capable Benefits.
Smooth switching waveforms.
Reduce switching los.

E3M0900170D 1700v n-channel enhancement mode power mosfet by Wolfspeed - Datasheet Preview

Datasheet Details

Part number	E3M0900170D
Manufacturer	Wolfspeed
File Size	1.00 MB
Description	1700V N-Channel Enhancement Mode Power MOSFET
Datasheet	E3M0900170D Datasheet

📁 Similar Datasheet

E3M0065090D - Silicon Carbide Power MOSFET (CREE)
E3M0075120D - Silicon Carbide Power MOSFET (Cree)
E3M0075120K - Silicon Carbide Power MOSFET (Cree)
E3M0120090D - Silicon Carbide Power MOSFET (CREE)
E3M0120090J - Silicon Carbide Power MOSFET (Cree)
E3M0280090D - Silicon Carbide Power MOSFET (CREE)
E3M-V - Color Mark Sensor (Omron)
E3M-VG11 - Color Mark Sensor (Omron)
E3M-VG12 - Color Mark Sensor (Omron)
E3M-VG16 - Color Mark Sensor (Omron)

Other Datasheets by Wolfspeed

E3M0900170J - 1700V N-Channel Enhancement Mode Power MOSFET
E3M0016120K - Silicon Carbide Power MOSFET
E3M0021120J2 - Silicon Carbide Power MOSFET
E3M0021120K - Silicon Carbide Power MOSFET
E3M0032120J2 - Silicon Carbide Power MOSFET
E3M0032120K - Silicon Carbide Power MOSFET
E3M0040120J2 - Silicon Carbide Power MOSFET
E3M0040120K - Silicon Carbide Power MOSFET

Full PDF Text Transcription

Click to expand full text

E3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • 12V...

Published: Apr 15, 2025 |