E3M0900170J Description
E3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode.
E3M0900170J Key Features
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Halogen free, RoHS pliant
- Automotive qualified (AEC-Q101) and PPAP capable
- Smooth switching waveforms
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Increases system switching frequency
- Increases system reliability