HAS175M12BM3 Description
HAS175M12BM3 5 1200 V, 175 A, Silicon Carbide, Half-Bridge Module VDS IDS4 1200 V 3 175 A 2.
HAS175M12BM3 Key Features
- Industry Standard 62 mm Footprint
- Housing CTI ≥ 600 (Material Group I)
- pliant with EN45545-2 R22/23 HL3
- High Humidity Operation THB-80 (HV-H3TRB)
- Low Inductance Design Optimized for SiC
- Ultra Low Loss, High-Frequency Operation
- Normally-off, Fail-safe Device Operation
- Copper Baseplate and Aluminum Nitride Insulator