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HAS530M12BM3 - 1200V 530A Half-Bridge Module

Key Features

  • Industry Standard 62 mm Footprint.
  • Housing CTI ≥ 600 (Material Group I).
  • Compliant with EN45545-2 R22/23 HL3.
  • High Humidity Operation THB-80 (HV-H3TRB).
  • Low Inductance Design Optimized for SiC.
  • Ultra Low Loss, High-Frequency Operation.
  • Normally-off, Fail-safe Device Operation C.
  • Copper Baseplate and Aluminum Nitride Insulator VDS IDS4 1200 V 3 530 A 2 V+ G1 K1 Mid G2 K2 V- Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAS530M12BM3, 5 HAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Housing CTI ≥ 600 (Material Group I) • Compliant with EN45545-2 R22/23 HL3 • High Humidity Operation THB-80 (HV-H3TRB) • Low Inductance Design Optimized for SiC • Ultra Low Loss, High-Frequency Operation • Normally-off, Fail-safe Device Operation C • Copper Baseplate and Aluminum Nitride Insulator VDS IDS4 1200 V 3 530 A 2 V+ G1 K1 Mid G2 K2 V- Typical Applications • Railway Auxiliary & Traction • Induction Heating • Motor Drives • Renewables • EV Fast Charging • UPS and SMPS System Benefits 3 • 62 mm Form Factor Enables System Retrofit • Increased System Efficiency, due to Low Switching & Conduction Losses of SiC • Zero RBever