XP10NA011LH
XP10NA011LH is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
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S TO-252(H)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
+20
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3
Value 2.5 62.5
Units ℃/W ℃/W
1 202401251YAGEO
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge4 Gate-Source Charge4 Gate-Drain ("Miller") Charge4 Turn-on Delay Time4 Rise Time4 Turn-off Delay...
