XP10NA1R5TL
XP10NA1R5TL is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
XP10NA1R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TOLL package is a perfect solution for high power density and high power efficiency application.
BVDSS RDS(ON)
100V 1.5mΩ
GS SS S S SS
TOLL (TL)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V4(Silicon Limited) Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
+20
500 m J
-55 to 175
℃
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value 0.45 40
Units ℃/W ℃/W
1 202310132YAGEO
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max....
