XP10NA011LJV Datasheet | YAGEO

Description AXP41600N4A0s1e1ri Lessearirees faroremin Andovvaantecdedde Psoigwnear nindnsoivlicaotendprdoecseigsns atencdhnsoililcoogny ptoroacechssievteechthneolologwyetsot apcohsiseivbelethoen-lroewseisstat npcoessaibnlde ofans-tresswisitachnicneg apnedrfofarmstasnwceitc. h Iitnpgropveirdfoersmtahneced.e Istigpnreorvidweitsh thaen deextsriegmneer ewffiitchieannt deextvriecme efoerffuicsientindeaviwceideforraunsgee inof apowwideer raapnpgliecaotfiopnosw. er applications. The TO-220 package is widely preferred for all merciali Tnhdeust Tri Oal-25th1r Vo Sughshohrtoleleadappplaiccaktaiognes. is Thperefelorrwed thfoerrmaall rceosmismtaenrcceiala-indulsotwriapl atchkroauggehc-hoosltecoanptprilbicuatteiontos thweithwoourtldlweaiddepcuotpteudla.r package. BVDSS RDS(ON) ID 100V 11mΩ 48.4A GD S TO-251VS(JV) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 2.5 110 Units ℃/W ℃/W 1 202311232YAGEO Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge3 Gate-Source Charge3 Gate-Drain ("Miller") Charge3 Turn-on Delay Time3 Rise Time3 Turn-off Delay Time3 Fall Time3 Input Capacitance3...