XP10NB5R5H Datasheet | YAGEO

Description AXP41600N4B5s Re5riesseraieres afrroemin Anodvvaatnecdedde Psiogwnearnidnnsoilvicaotendprdoecseigsns atencdhnsoililcoogny ptoroacechssievteechthneolologwyetsot apcohsiseivbelethoen-lroewseisstat npcoessaibnlde S TO-252(H) ofans-tresswisitachnicneg apnedrfofarmstasnwceitc. h Iitnpgropveirdfoersmtahneced.e Istigpnreorvidweitsh thaen deextsriegmneer ewffiitchieannt deextvriecme efoerffuicsientindeaviwceideforraunsgee inof apowwideer raapnpgliecaotfiopnosw. er applications. The TO-220 package is widely preferred for all mercial- i Tn Odu-2s5tr2ial patchkroauggeh ishowleidelayppplriceafetirornesd. fo Trheall locwommtheerrcmiaal-l rinedsuisstatrniacle saunrfdacloewmpoaucnkat gaeppcolicsat tcioonnstribuustiengtointfhrearewdorlrdewfliodwe pteocphunlaiqrupeaacnkadgseu.ited for high current application due to the low connection resistance. Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TC=25℃ Drain Current, VGS @ 10V6(Silicon Limited) ID@TC=25℃ Drain Current, VGS @ 10V6(Package Limited) ID@TC=100℃ IDM Drain Current, VGS @ 10V Pulsed Drain Current1 PD@TC=25℃ PD@TA=25℃ EAS Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy4 200 m J TSTG Storage Temperature Range -55 to 175 ℃ Operating Junction Temperature Range -55 to 175 ℃ Thermal...