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XP10TN028YT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP10TN028 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP10TN028YT
Manufacturer YAGEO
File Size 457.47 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP10TN028YT Datasheet
Additional preview pages of the XP10TN028YT datasheet.

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Full PDF Text Transcription

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XP10TN028YT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free G S Description XP10TN028 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) ID 100V 28mΩ 7.
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