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XP10TN030M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP10TN030 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP10TN030M
Manufacturer YAGEO
File Size 244.94 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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XP10TN030M Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D D D D SO-8 G S S S Description XP10TN030 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G 100V 30mΩ 6.
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