• Part: XP3700M
  • Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 275.82 KB
Download XP3700M Datasheet PDF
YAGEO
XP3700M
Description XP3700 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 30V 20mΩ 7.8A -30V 45mΩ -5.5A D2 S2 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel Drain-Source Voltage -30 VGS ID@TA=25℃ ID@TA=70℃ Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 +20 +20 -5.5 -4.4 Pulsed Drain Current1 -20 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature...