• Part: XP3700YT
  • Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 736.04 KB
Download XP3700YT Datasheet PDF
YAGEO
XP3700YT
Description PMPAK® 3x3 P-CH XP3700 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 30V 20mΩ 8.7A -30V 45mΩ -6.1A D2 The PMPAK ® 3x3 package is special for voltage conversion G1 G2 application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S1 S2 Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel Drain-Source Voltage -30 VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 +20 +20 -6.1 -4.9 -20 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to...