• Part: XP3700MT
  • Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 732.95 KB
Download XP3700MT Datasheet PDF
YAGEO
XP3700MT
Description S1 G1 S2 G2 XP3700 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for voltage conversion RDS(ON) ID3 45mΩ -7.3A D1 D1 D2 D2 application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S1 G1 S2 G2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel Drain-Source Voltage -30 VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 +20 +20 -7.3 -5.9 -30 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to...