Datasheet Details
| Part number | XP3P050AG |
|---|---|
| Manufacturer | YAGEO |
| File Size | 170.13 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP3P050AG-YAGEO.pdf |
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Overview: ▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free XP3P050AG Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) -30V 50mΩ G ID - 4.
| Part number | XP3P050AG |
|---|---|
| Manufacturer | YAGEO |
| File Size | 170.13 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP3P050AG-YAGEO.pdf |
|
|
|
XP3P050A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
D S SOT-89 D G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range - 30 V +20 V - 4.1 A -3.2 A -20 A 1.25 W -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 100 Unit ℃/W 1 202310132YAGEO XP3P050AG Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
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|---|---|
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