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XP3P050AG - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3P050A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3P050AG
Manufacturer YAGEO
File Size 170.13 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3P050AG Datasheet

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Full PDF Text Transcription

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▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free XP3P050AG Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) -30V 50mΩ G ID - 4.1A S Description XP3P050A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
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