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XP3P050AH - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3P050A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3P050AH
Manufacturer YAGEO
File Size 217.90 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3P050AH Datasheet

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Full PDF Text Transcription

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XP3P050AH Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D BVDSS -30V RDS(ON) 50mΩ ID -15.6A S Description XP3P050A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
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