• Part: XP3P050AM
  • Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 209.68 KB
Download XP3P050AM Datasheet PDF
YAGEO
XP3P050AM
Description XP3P050A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3 SO-8 -30V 50mΩ -5.8A G S SS Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range -30 +20 -5.8 -4.6 -30 -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value...