A3V64S40GTP Overview
A3V64S40GTP is organized as 4-bank x 1,048,576-word x 16-bit Synchronous DRAM with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. A3V64S40GTP achieve very high speed data rates up to 166MHz, and are suitable for main memories or graphic memories in puter systems.
A3V64S40GTP Key Features
- Single 3.3V ±0.3V power supply
- Maximum clock frequency
- 60:166MHz<3-3-3>/-70:143MHz<3-3-3>/-75:133MHz<3-3-3>
- Fully synchronous operation referenced to clock rising edge
- 4-bank operation controlled by BA0, BA1 (Bank Address)
- CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/FP (programmable)
- Burst type- Sequential and interleave burst (programmable)
- Byte Control- LDQM and UDQM (A3V64S40GTP)
- Random column access