FCX1051A - NPN SILICON POWER TRANSISTOR

Zetex (now Diodes Incorporated)

Key Features

FCX1051A C.
2W POWER.

FCX1051A npn silicon power transistor by Zetex (now Diodes Incorporated) - Datasheet Preview

Datasheet Details

Part number	FCX1051A
Manufacturer	Zetex (now Diodes Incorporated)
File Size	49.59 KB
Description	NPN SILICON POWER TRANSISTOR
Datasheet	FCX1051A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES FCX1051A C * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 17mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 57mΩ at 3A FCX1151A 051 E C B Complimentary Type Partmarking Detail - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 150 40 5 10 3 1 † 2 ‡ -55 to +150 UNIT V V V A A W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.