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FCX596 - PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 7 FCX596 D PARTMARKING DETAIL – P96 S G SOT89 SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -220 -200 -5 -1 -0.3 -200 1 -65 to +150 MAX. UNIT CONDITIONS. V V V -100 -100 -100 -0.2 -0.35 -1.0 -0.9 100 100 85 35 150 10 nA nA nA V V V V IC=-100µ A IC=-10mA* IE=-100µ A VCB=-200V VEB=-4V VCES=-200V IC=-100mA,IB=-10mA IC=-250mA IB=-25mA* IC=-250mA,IB=-25mA* IC=-250mA,VCE=-10V* IC=-1mA, VCE=-10V IC=-100mA,VCE=-10V* IC=-250mA,VCE=-10V* IC=-400mA,VCE=-10V, MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz D ABSOLUTE MAXIMUM RATINGS.