ZVN2120A Datasheet | Zetex Semiconductors

FEATURES - 200 Volt VDS - RDS(on)= 10Ω E-Line TO92 patible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 200 180 2 ± 20 700 -55 to +150 UNIT V m A A V m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 200 1 3 20 10 100 500 10 100 85 20 7 8 8 20 12 MAX. UNIT CONDITIONS. V V n A µA µA m A Ω m S p F p F p F ns ns ns ns V DD ≈ 25V, I D=250m A V DS=25 V, V GS=0V, f=1MHz I D=1m A, V GS=0V ID=1m A, V DS= V GS V GS= ± 20V, V DS=0V V DS=200V, V GS=0 V DS=160V, V GS=0V, T=125°C (2) V DS=25V, V GS=10V V GS=10V,I D=250m A V DS=25V,I D=250m A I D(on) Static Drain-Source On-State R DS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) mon Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) g fs C iss C oss C rss t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-368 ( 3 TYPICAL CHARACTERISTICS ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 5V ID(on) -On-State Drain Current (Amps) 1.4 1.2 10V VGS= 8V 7V 6V 5V 4V 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 4V 3V 2V 0 10 20 30 40 50 3V 2V - Drain Source Voltage (Volts) - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage...